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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3467
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3467 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER 2SK3467 2SK3467-ZK PACKAGE TO-220AB TO-263(MP-25ZK)
FEATURES
* 4.5 V drive available * Low on-state resistance RDS(on)1 = 6.0 m MAX. (VGS = 10 V, ID = 40 A) * Low gate charge QG = 55 nC TYP. (ID = 80 A, VDD = 16 V, VGS = 10 V) * Built-in gate protection diode * Surface mount device available (TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (Pulse)
Note
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
20 20 80 320 1.5 76 150 -55 to +150
V V A A W W C C (TO-263)
Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C) Channel Temperature Storage Temperature Note PW 10 s, Duty Cycle 1%
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14991EJ1V0DS00 (1st edition) Date Published March 2001 NS CP(K) Printed in Japan
(c)
2001
2SK3467
ELECTRICAL CHARACTERISTICS(TA = 25C)
CHARACTERISTICS Zero Gate voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 16 V VGS = 10 V ID = 80 A IF = 80 A, VGS = 0 V IF = 80 A, VGS = 0 V di/dt = 100 A/s TEST CONDITIONS VDS = 20 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 40 A VGS = 10 V, ID = 40 A VGS = 4.5 V, ID = 40 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 10 V , ID = 40 A VGS(on) = 10 V RG = 10 1.5 20 4.8 6.7 2800 1200 600 16 23 74 31 55 9 17 1.0 44 40 6.0 9.5 MIN. TYP. MAX. 10 10 2.5 UNIT
A A
V S m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL PG. RG VDD VDS
90%
VGS VGS
Wave Form
IG = 2 mA
90% 10%
RL VDD
0
PG.
50
VGS 0 = 1 s Duty Cycle 1%
VDS
Wave Form
0
10%
td(on) ton
tr td(off) toff
tf
2
Data Sheet D14991EJ1V0DS
2SK3467
TYPICAL CHARACTERISTICS (TA = 25C)
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 350 300
ID - Drain Current - A
1000 FORWARD TRANSFER CHARACTERISTICS Pulsed VDS = 10 V
ID - Drain Current - A
VGS =10 V
7.0 V
250 200 150 100 50 Pulsed 0 0 1 2 3 4.5 V
100
10 Tch = -50C -25C 25C 75C 150C 1 2 3 4 5
1
0.1
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
VGS(off) - Gate to Source Cut-off Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3.0 2.5 2.0 1.5 1.0 0.5 0 -50
| yfs | - Forward Transfer Admittance - S
100
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V Pulsed
VDS = 10 V ID = 1 mA
10 Tch = 150C 75C 25C -25C -50C
1
-10
30
70
110
150
0.1 0.01
0.1
1
10
100
Tch - Channel Temperature - C
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
20 Pulsed 15
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 Pulsed 16
ID = 80 A 40 A 16 A
12 7.0 V
10
8
VGS = 4.5 V
5
4 0
10 V
0
0
5
10
15
20
1
10
100
1000
VGS - Gate to Source Voltage - V
ID - Drain Current - A
Data Sheet D14991EJ1V0DS
3
2SK3467
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 12 10 8 6 4 2
ID = 40 A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000
ISD - Diode Forward Current - A
Pulsed
VGS = 10 V
100 4.5 V 10 1 0V
VGS = 4.5 V 7.0 V 10 V
0.1
0 -50
-10
30
70
110
150
0.01 0
0.4
0.8
1.2
1.6
2.0
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
Ciss, Coss, Crss - Capacitance - pF td(on), tr, td(off), tf - Switching Time - ns
SWITCHING CHARACTERISTICS 1000
VGS = 0 V f = 1 MHz
Ciss 1000 Coss Crss
100 tf tr 10
td(off)
td(on)
100 0.1
1
10
100
1 0.1
1
10
VDD = 10 V VGS = 10 V RG = 10 100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000
trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V
di/dt = 100 A/s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 18 16 14 12 10 8 6 4 2 0 0 10 20 VDS 30 40 50 60 4 VGS VDD = 16 V 10 V 8 ID = 80 A 12
VGS - Gate to Source Voltage - V
100
10
1 0.1
0
1
10
100
ISD - Diode Forward Current - A
QG - Gate Charge - nC
4
Data Sheet D14991EJ1V0DS
2SK3467
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 80
dT - Percentage of Rated Power - %
80
PT - Total Power Dissipation - W
0 20 40 60 80 100 120 140 160
70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160
60
40
20 0
Tch - Channel Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 1000
ID(pulse)
PW =1 0 s
ID - Drain Current - A
100
d ite V) Lim 10 n) = (o S S RD V G ID(DC) (@
Po we r
10
Di ss ipa tio n
10 0 s 30 0 s 1m s 3m 10 s m s
Lim ite d
DC
1 0.1
TC = 25C Single Pulse 1 10 100 VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 83.3C/W
10
1
Rth(ch-C) = 1.65C/W
0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - sec
Data Sheet D14991EJ1V0DS
5
2SK3467
PACKAGE DRAWINGS (Unit : mm) 1)TO-220AB (MP-25)
3.00.3
10.6 MAX. 10.0 4.8 MAX.
2)TO-263 (MP-25ZK)
10.00.2 No plating 0.4 8.4 TYP. 4
1.350.3
3.60.2
5.9 MIN.
4.450.2 1.30.2
1.30.2
8.0 TYP.
15.5 MAX.
9.150.2
15.250.5
0.025 to 0.25
4 123
6.0 MAX.
12.7 MIN.
1.30.2
0.5
0.70.15 2.54
0.2 8o
0 to
0.25
0.750.1 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
1
2
3 1.Gate 2.Drain 3.Source
2.5
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
6
Data Sheet D14991EJ1V0DS
2.450.25
2SK3467
[MEMO]
Data Sheet D14991EJ1V0DS
7
2SK3467
* The information in this document is current as of March, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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